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radiation hardened IRHYK57133CMSE power mosfetsurface mount (low-ohmic to-257aa) 130v, n-channel technology absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 20 i d @ v gs = 12v, t c = 100c continuous drain current 12.5 i dm pulsed drain current 80 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 73 mj i ar avalanche current 20 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt 11.3 v/ns t j operating junction -55 to 150 t stg storage temperature range pack. mounting surface temp. 300 (for 5s) weight 3.7 (typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performanceup to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dcconverters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a www.irf.com 1 product summary part number radiation level r ds(on) i d IRHYK57133CMSE 100k rads (si) 0.082 ? 20a
low-ohmic to-257aa features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight pd - 96898 downloaded from: http:///
IRHYK57133CMSE pre-irradiation 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 1.67 r thja junction-to-ambient 80 ty pical socket mount c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 20 i sm pulse source current (body diode) 80 v sd diode forward voltage 1.2 v t j = 25c, i s = 20a, v gs = 0v t rr reverse recovery time 200 ns t j = 25c, i f = 20a, di/dt 100a/ s q rr reverse recovery charge 1.5 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier website.
electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 130 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.09 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.082 ? v gs = 12v, i d = 12.5a resistance v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 7.4 s ( ) v ds = 15v, i ds = 12.5a i dss zero gate voltage drain current 10 v ds = 104v ,v gs =0v 2 5 v ds = 104v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 48 v gs =12v, i d = 20a q gs gate-to-source charge 16 nc v ds = 65v q gd gate-to-drain (miller) charge 18 t d (on) turn-on delay time 20 v dd = 65v, i d = 20a t r rise time 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time 35 t f fall time 40 l s + l d total inductance 6.8 measured from drain lead (6mm / 0.25in . from package) to source lead ( 6mm /0.25in. from package) c iss input capacitance 1020 v gs = 0v, v ds = 25v c oss output capacitance 285 p f f = 1.0mhz c rss reverse transfer capacitance 10 r g internal gate resistance 0.77 ? f = 1.0mhz, open drain na ? nh ns a downloaded from: http:///
www.irf.com 3 pre-irradiation IRHYK57133CMSE radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.
table 1. electrical characteristics @ tj = 25c, post total dose irradiation international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 130 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 na v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 10 a v ds = 104v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-3) 0.082 ? v gs = 12v, i d = 12.5a r ds(on) static drain-to-source on-state v sd diode forward voltage 1.2 v v gs = 0v, i d = 20a resistance (low-ohmic to-257) 0.082 ? v gs = 12v, i d = 12.5a table 2. single event effect safe operating area ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 130 130 130 130 130 i 59.8 341 32.5 130 130 130 100 50 au 82.3 350 28.4 130 120 30 0 30 60 90 120 150 -20 -15 -10 -5 0 vgs vds br i au downloaded from: http:///
IRHYK57133CMSE pre-irradiation 4 www.irf.com

15 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v 5678910111213 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 12v i d = 20a downloaded from: http:///
www.irf.com 5 pre-irradiation IRHYK57133CMSE

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1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 2400 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 q g, total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 104v v ds = 65v v ds = 26v i d = 20a for test circuit see figure 13 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s downloaded from: http:///
IRHYK57133CMSE pre-irradiation 6 www.irf.com $

v ds 90%10% v gs t d(on) t r t d(off) t f $
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v gs 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 downloaded from: http:///
www.irf.com 7 pre-irradiation IRHYK57133CMSE q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 8.9a 12.6a bottom 20a downloaded from: http:///
IRHYK57133CMSE pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 104 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 0.36 mh peak i l = 20a, v gs = 12v i sd 20a, di/dt 690a/ s, v dd 130v, t j 150c footnotes: case outline and dimensions low ohmic to-257aa ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/2004 not es : 1. dimens ioning & t olerancing per ans i y14.5m-1994. 2. cont roll ing dimens ion: inch. 3. dimens ions are s hown in mill imet ers [inches ]. 4. outline conforms to jedec outline to-257aa. pin assignments 1 = drain 2 = source 3 = gate 0.25 [.010] b a 3x b 123 a c 15.49 [.610] 14.73 [.580] 2.79 [.110] 2.29 [.090] 3.17 [.125] 2.92 [.115] 0.889 [.035] max. 5.08 [.200] 4.83 [.190] 10.66 [.420] 10.42 [.410] 10.92 [.430] 10.42 [.410] 2.54 [.100] 0.88 [.035] 0.64 [.025] 0.13 [.005] 2x downloaded from: http:///

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